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mrf6s19100hr3 MRF6S19100HSR3 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for n- cdma base station applications with frequencies from 1930 to 1990 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n - p c s / c e l l u l a r r a d i o a n d w l l applications. ? typical 2 - carrier n - cdma performance: v dd = 28 volts, i dq = 900 ma, p out = 22 watts avg., full frequency band, is - 95 (pilot, sync, paging, traffic codes 8 through 13) channel bandwidth = 1.2288 mhz. par = 9.8 db @ 0.01% probability on ccdf. power gain ? 16.1 db drain efficiency ? 28% im3 @ 2.5 mhz offset ? - 37 dbc @ 1.2288 mhz channel bandwidth acpr @ 885 khz offset ? - 51 dbc @ 30 khz channel bandwidth ? capable of handling 10:1 vswr, @ 28 vdc, 1960 mhz, 100 watts cw output power ? characterized with series equivalent large - signal impedance parameters ? internally input and output matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? lower thermal resistance package ? designed for lower memory effects and wide instantaneous bandwidth applications ? low gold plating thickness on leads, 40 ? nominal. ? pb - free and rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +68 vdc gate - source voltage v gs - 0.5, +12 vdc total device dissipation @ t c = 25 c derate above 25 c p d 398 2.3 w w/ c storage temperature range t stg - 65 to +150 c operating junction temperature t j 200 c cw operation cw 100 w table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 80 c, 100 w cw case temperature 77 c, 22 w cw r jc 0.44 0.50 c/w 1. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. document number: mrf6s19100h rev. 3, 8/2005 freescale semiconductor technical data mrf6s19100hr3 MRF6S19100HSR3 1990 mhz, 22 w avg., 28 v 2 x n - cdma lateral n - channel rf power mosfets case 465a - 06, style 1 ni - 780s MRF6S19100HSR3 case 465 - 06, style 1 ni - 780 mrf6s19100hr3 ? freescale semiconductor, inc., 2005. all rights reserved.
2 rf device data freescale semiconductor mrf6s19100hr3 MRF6S19100HSR3 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 3a (minimum) machine model (per eia/jesd22 - a115) b (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 250 adc) v gs(th) 1 2 3 vdc gate quiescent voltage (v ds = 28 vdc, i d = 900 madc) v gs(q) 2 2.8 4 vdc drain - source on - voltage (v gs = 10 vdc, i d = 2.2 adc) v ds(on) 0.1 0.21 0.3 vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 5.3 ? s dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.5 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 900 ma, p out = 22 w avg., f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz, 2 - carrier n - cdma, 1.2288 mhz channel bandwidth carriers. acpr measured in 30 khz channel bandwidth @ 885 khz offset. im3 measured in 1.2288 mhz channel bandwidth @ 2.5 mhz offset. par = 9.8 db @ 0.01% probability on ccdf. power gain g ps 15 16.1 18 db drain efficiency d 26 28 ? % intermodulation distortion im3 ? -37 -35 dbc adjacent channel power ratio acpr ? -51 -48 dbc input return loss irl ? -15 -9 db 1. part is internally matched both on input and output.
mrf6s19100hr3 MRF6S19100HSR3 3 rf device data freescale semiconductor figure 1. mrf6s19100hr3(hsr3) test circuit schematic z7 0.091 x 0.900 microstrip z8 0.493 x 0.900 microstrip z9 0.440 x 0.195 microstrip z10 0.470 x 0.084 microstrip z11 0.735 x 0.084 microstrip pcb arlon gx - 0300 - 55 - 22, 0.030 , r = 2.55 z1 0.130 x 0.084 microstrip z2 0.360 x 0.084 microstrip z3 0.260 x 0.084 microstrip z4 0.950 x 0.084 microstrip z5 0.457 x 0.940 microstrip z6 0.083 x 0.940 microstrip c5 r2 v bias c4 + r1 rf input dut z1 z2 z3 z4 z5 z6 c1 c2 c3 z7 z8 z9 z10 z11 rf output c6 c7 v supply c8 + c9 + c10 + c11 c12 + b1 table 5. mrf6s19100hr3(hsr3) test circuit component designations and values part description part number manufacturer b1 rf bead 2743019447 fair - rite c1, c2 0.6 - 4.5 pf variable capacitors, gigatronics 27271sl johanson dielectrics c3 15 pf chip capacitor 100b150cp500x atc c4, c7 5.6 pf chip capacitors 100b5r6jp500x kemet c5 1 f, 50 v tantalum chip capacitor t491c105k050as kemet c6 43 pf chip capacitor 100b430cp500x atc c8, c10 22 f, 35 v tantalum chip capacitors t491x226k035as kemet c9 10 f, 35 v tantalum chip capacitor t491c106k035as kemet c11 0.1 f chip capacitor (1825) c1825c14j5rac kemet c12 100 f, 50 v electrolytic capacitor, radial mcr50v107m8x11 multicomp r1 12 ? , 1/4 w chip resistor (1206) crcw120612r0f100 vishay r2 2 k , 1/4 w chip resistor (1206) crcw12062001f100 vishay
4 rf device data freescale semiconductor mrf6s19100hr3 MRF6S19100HSR3 figure 2. mrf6s19100hr3(hsr3) test circuit component layout v dd v gg b1 r1 r2 c5 c4 c1 c2 c3 c7 c8 c9 c11 c10 c12 c6 cut out area mrf6s19100h/hs rev 2 - + freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
mrf6s19100hr3 MRF6S19100HSR3 5 rf device data freescale semiconductor typical characteristics ?20 ?5 ?10 ?15 d , drain efficiency (%) irl, input return loss (db) im3 (dbc), acpr (dbc) 1990 1930 irl g ps acpr im3 f, frequency (mhz) figure 3. 2 - carrier n - cdma broadband performance @ p out = 22 watts avg. ?20 ?5 ?10 ?15 v dd = 28 vdc, p out = 22 w (avg.), i dq = 900 ma 2?carrier n?cdma, 2.5 mhz carrier spacing 1970 1960 1940 15.4 16.6 ?53 29 27 25 ?35 ?41 ?47 irl g ps acpr im3 f, frequency (mhz) figure 4. 2 - carrier n - cdma broadband performance @ p out = 44 watts avg. v dd = 28 vdc, p out = 44 w (avg.), i dq = 900 ma 2?carrier n?cdma, 2.5 mhz carrier spacing 14.8 16.2 16 ?45 42 40 38 ?25 ?30 ?35 figure 5. two - tone power gain versus output power figure 6. third order intermodulation distortion versus output power 100 13 18 1 i dq = 1300 ma 1125 ma v dd = 28 vdc, f1 = 1958.75 mhz, f2 = 1961.25 mhz two?tone measurements, 2.5 mhz tone spacing 17 16 15 10 300 ?30 ?15 1 i dq = 450 ma 900 ma 100 ?20 ?25 300 ?55 ?50 v dd = 28 vdc, f1 = 1958.75 mhz, f2 = 1961.25 mhz two?tone measurements, 2.5 mhz tone spacing 10 1990 1930 1970 1960 1940 d , drain efficiency (%) d g ps , power gain (db) irl, input return loss (db) im3 (dbc), acpr (dbc) g ps , power gain (db) p out , output power (watts) pep p out , output power (watts) pep g ps , power gain (db) intermodulation distortion (dbc) imd, third order 16.4 16.2 16 15.8 15.6 1950 1980 1.2288 mhz channel bandwidth, par = 9.8 db @ 0.01% probability (ccdf) 15.8 15.6 15.4 15.2 15 1950 1980 1.2288 mhz channel bandwidth, par = 9.8 db @ 0.01% probability (ccdf) 14 900 ma 675 ma 450 ma 1300 ma 1125 ma ?35 ?40 ?45 675 ma ?40 d
6 rf device data freescale semiconductor mrf6s19100hr3 MRF6S19100HSR3 typical characteristics figure 7. intermodulation distortion products versus tone spacing 10 ?60 0 0.1 7th order two?tone spacing (mhz) v dd = 28 vdc, p out = 100 w (pep), i dq = 900 ma two?tone measurements, center frequency = 1960 mhz 5th order 3rd order ?10 ?30 ?40 ?50 1 100 figure 8. pulse cw output power versus input power figure 9. 2 - carrier n - cdma acpr, im3, power gain and drain efficiency versus output power 0 ?70 p out , output power (watts) avg. 60 ?10 50 ?20 40 ?30 30 ?40 10 ?60 10 100 ?50 20 v dd = 28 vdc, i dq = 900 ma f1 = 1958.75 mhz, f2 = 1961.25 mhz 2?carrier n?cdma, 2.5 mhz carrier spacing, 1.2288 mhz channel bandwidth, par = 9.8 db @ 0.01% probability (ccdf) 40 56 31 p3db = 51.56 dbm (143.2 w) p in , input power (dbm) v dd = 28 vdc, i dq = 900 ma pulsed cw, 8 sec(on), 1 msec(off) f = 1960 mhz 54 53 52 46 32 33 36 37 actual ideal p1db = 50.9 dbm (124.2 w) 55 48 30 10 17 0 70 p out , output power (watts) cw figure 10. power gain and drain efficiency versus cw output power v dd = 28 vdc i dq = 900 ma f = 1960 mhz 100 10 16 15 13 12 11 60 40 30 20 10 figure 11. power gain versus output power p out , output power (watts) cw v dd = 32 v im3 d g ps acpr d , drain efficiency (%), g ps , power gain (db) imd, intermodulation distortion (dbc) im3 (dbc), acpr (dbc) d , drain efficiency (%) g ps d g ps , power gain (db) 20 0 6 18 0 16.5 10.5 9 25 12 15 28 v i dq = 900 ma f = 1960 mhz p out , output power (dbm) g ps , power gain (db) ?20 51 24 v 20 v 16 v 50 47 49 34 35 38 39 14 50 13.5 7.5 50 75 100 125 150 175 12 v 4 200 3 200
mrf6s19100hr3 MRF6S19100HSR3 7 rf device data freescale semiconductor typical characteristics 210 10 9 t j , junction temperature ( c) figure 12. mttf factor versus junction temperature this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. 10 8 10 7 10 6 110 130 150 170 190 mttf factor (hours x amps 2 ) 90 100 120 140 160 180 200 n - cdma test signal 10 0.0001 100 0 peak?to?average (db) figure 13. 2 - carrier ccdf n - cdma 10 1 0.1 0.01 0.001 2468 is?95 cdma (pilot, sync, paging, traffic codes 8 through 13) 1.2288 mhz channel bandwidth carriers. acpr measured in 30 khz bandwidth @ 885 khz offset. im3 measured in 1.2288 mhz bandwidth @ 2.5 mhz offset. par = 9.8 db @ 0.01% probability on ccdf. probability (%) f, frequency (mhz) ?100 0 figure 14. 2 - carrier n - cdma spectrum ?10 ?20 ?30 ?40 ?50 ?60 ?70 ?80 ?90 ?acpr @ 30 khz integrated bw +acpr @ 30 khz integrated bw ?im3 @ 1.2288 mhz integrated bw +im3 @ 1.2288 mhz integrated bw 1.2288 mhz channel bw 6 1.5 4.5 3 0 ?1.5 ?3 ?4.5 ?6 ?7.5 7.5 (db)
8 rf device data freescale semiconductor mrf6s19100hr3 MRF6S19100HSR3 figure 15. series equivalent source and load impedance f mhz z source ? z load ? 1930 1960 1990 2.26 - j2.31 2.14 - j2.00 2.22 - j2.13 1.57 - j3.50 1.83 - j3.29 2.34 - j3.71 v dd = 28 vdc, i dq = 900 ma, p out = 22 w avg. z o = 5 ? z load z source f = 1930 mhz f = 1990 mhz z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network f = 1930 mhz f = 1990 mhz
mrf6s19100hr3 MRF6S19100HSR3 9 rf device data freescale semiconductor notes
10 rf device data freescale semiconductor mrf6s19100hr3 MRF6S19100HSR3 notes
mrf6s19100hr3 MRF6S19100HSR3 11 rf device data freescale semiconductor package dimensions case 465 - 06 issue g ni - 780 mrf6s19100hr3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.772 0.788 19.60 20.00 q .118 .138 3.00 3.51 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h s f s 0.365 0.375 9.27 9.52 m 0.774 0.786 19.66 19.96 aaa 0.005 ref 0.127 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) m a m aaa b m t (insulator) r m a m ccc b m t (lid) case 465a - 06 issue h ni - 780s MRF6S19100HSR3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.805 0.815 20.45 20.70 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 m 0.774 0.786 19.61 20.02 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 5. source 1 2 d k c e h f 3 u (flange) 4x z (lid) 4x bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.005 ref 0.127 ref s 0.365 0.375 9.27 9.52 n 0.772 0.788 19.61 20.02 u ??? 0.040 ??? 1.02 z ??? 0.030 ??? 0.76 m a m bbb b m t b b (flange) 2x seating plane m a m ccc b m t m a m bbb b m t a a (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator)
12 rf device data freescale semiconductor mrf6s19100hr3 MRF6S19100HSR3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6s19100h rev. 3, 8/2005

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